Available Technologies

Browse Penn-owned technologies available for licensing.

HOME SEARCH RSS FEED

NON VOLATILE RESISTANCE SWITCHING SI BASED THIN FILM DEVICES

Description:
Current non-volatile memory products, a $30B market, are dominated by flash memories. However, flash memory is facing challenges of unable to scale down for future market. Resistance-switching cell is one of the most promising contenders for replacing flash memory.  The new member cell developed at Penn is a resistance-switching device using Si-based amorphous materials. The entire device is fabricated on Si substrate using standard CMOS equipment, therefore compatible with IC process. The memory cells showed very promising performance: 25ns switching time, 2~4V threshold, 100 or better on/off ratio, and long memory retention time.

IP Status:
Pending worldwide rights

References:
Choi, B. J., Advanced Materials, Volume 23, Issue 33, pages 3847–3852, September 1, 2011


Patent Information:
For Information, Contact:
Qishui Chen
University of Pennsylvania
215-898-9591
qchen1@upenn.edu
Inventors:
I-Wei Chen
Keywords: