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Ruthenate materials with large magnetoresistance effects

Problem: 

Magnetoresistive materials can change their electrical resistance when subject to an applied magnetic field. This property can be used for non-volatile resistance switching memory in which high and low resistance states are used to encode data. A similar effect called EPIR (electric-pulse induced resistance) can be used to change material resistance with electrical pulses. To utilize such materials in electronics, nontoxic substances are needed that can easily be integrated with modern semiconductor processing.

 

Solution: 

Researchers at the University of Pennsylvania have developed ruthenate materials that exhibit large magnetoresistance and electric pulse induced resistance switching effects. These ruthenate formulations from the perovskite family are shown to have a magnetoresistive effect of 18% or more when a magnetic field is applied. These materials can exhibit both MR and room-temperature EPIR effects.

 

The family of ruthenate materials are non-toxic and compatible with CMOS processing, which could make them very useful for MR or EPIR based resistive memory devices.

 

Inventor:

I-Wei Chen

 

 

 

Advantages: 

  • Large magnetoresistance and electrical pulse induced resistance
  • Non-toxic compositions


Applications: 

Resistance switching nonvolatile memory

 

Stage of Development: 

Laboratory prototype

 

Intellectual Property: 

US Patents 7,211,199 & 8,652,347

 

Reference Media: 

Mamchik & Chen. (2003). Large magnetoresistance in magnetically frustrated ruthenates. Applied Physics Letters 82, 613. 

 

Desired Partnerships: 

License

 

Docket # O2773 

 

 

 

Download PDF 


Patent Information:
For Information, Contact:
Qishui Chen
Licensing Officer, SEAS/SAS Licensing Group
University of Pennsylvania
215-898-9591
qchen1@upenn.edu
Inventors:
I-Wei Chen
Keywords: