Synthesis of epitaxial two-dimensional Indium(II) selenide (InSe) by metal-organic chemical vapor deposition (MOCVD) over 2-inch wafers and its applications in electronics.
A ferroelectric transistor memory device combines AlScN dielectric with a 2D semiconductor channel such as MoS2 for non-volatile memory compatible with CMOS back-end of line (BEOL) fabrication.
An on-chip nonlinear optical device that uses AlScN films to undergo scalable manufacturing processes