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Analog Content-Addressable Memory Cells for Ultrafast Parallel Searching

A method to fabricate a parallel search architecture in the analog domain to improve inference accuracy, memory architecture, and speed.

Published: 8/27/2026

FeFET Memory Device for BEOL Silicon Integration

A ferroelectric transistor memory device combines AlScN dielectric with a 2D semiconductor channel such as MoS2 for non-volatile memory compatible with CMOS back-end of line (BEOL) fabrication.

Published: 8/6/2026